Nanotribological Characteristics of the Al Content of Al(x)Ga(1−x)N Epitaxial Films

por Wen, Hua-Chiang, Wu, Ssu-Kuan, Liu, Cheng-Wei, Dai, Jin-Ji, Chou, Wu-Ching
Publicado 2023

Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

por Diep, Nhu Quynh, Liu, Cheng-Wei, Wu, Ssu-Kuan, Chou, Wu-Ching, Huynh, Sa Hoang, Chang, Edward Yi
Publicado 2019

Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

por Diep, Nhu Quynh, Wu, Ssu Kuan, Liu, Cheng Wei, Huynh, Sa Hoang, Chou, Wu Ching, Lin, Chih Ming, Zhang, Dong Zhou, Ho, Ching Hwa
Publicado 2021

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

por Wu, Chia-Hsing, Huang, Yu-Che, Ho, Yen-Teng, Chang, Shu-Jui, Wu, Ssu-Kuan, Huang, Ci-Hao, Chou, Wu-Ching, Yang, Chu-Shou
Publicado 2022

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

por Dai, Jin-Ji, Mai, Thi Thu, Wu, Ssu-Kuan, Peng, Jing-Rong, Liu, Cheng-Wei, Wen, Hua-Chiang, Chou, Wu-Ching, Ho, Han-Chieh, Wang, Wei-Fan
Publicado 2021

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

por Liu, Cheng-Wei, Dai, Jin-Ji, Wu, Ssu-Kuan, Diep, Nhu-Quynh, Huynh, Sa-Hoang, Mai, Thi-Thu, Wen, Hua-Chiang, Yuan, Chi-Tsu, Chou, Wu-Ching, Shen, Ji-Lin, Luc, Huy-Hoang
Publicado 2020

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

por Dai, Jin-Ji, Mai, Thi Thu, Nallasani, Umeshwar Reddy, Chang, Shao-Chien, Hsiao, Hsin-I, Wu, Ssu-Kuan, Liu, Cheng-Wei, Wen, Hua-Chiang, Chou, Wu-Ching, Wang, Chieh-Piao, Hoang, Luc Huy
Publicado 2022