Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge(0.5)Se(0.5) solid electrolyte

por Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Das, Atanu, Prakash, Amit, Wu, Ya Hsuan, Lai, Chao-Sung, Tien, Ta-Chang, Chen, Wei-Su, Lee, Heng-Yuan, Chen, Frederick T, Tsai, Ming-Jinn, Chang, Liann-Be
Publicado 2012