Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

por Liu, Dan-Dan, Liu, Wen-Jun, Pei, Jun-Xiang, Xie, Lin-Yan, Huo, Jingyong, Wu, Xiaohan, Ding, Shi-Jin
Publicado 2019