Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

por Wang, Hongyue, Shi, Yijun, Xin, Yajie, Liu, Chang, Lu, Guoguang, Huang, Yun
Publicado 2022

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

por Wang, Hongyue, Yuan, Chao, Xin, Yajie, Shi, Yijun, Zhong, Yaozong, Huang, Yun, Lu, Guoguang
Publicado 2022

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

por He, Zhiyuan, Shi, Yijun, Huang, Yun, Chen, Yiqiang, Wang, Hongyue, Wang, Lei, Lu, Guoguang, Xin, Yajie
Publicado 2022