Dephasing by optical phonons in GaN defect single-photon emitters

por Geng, Yifei, Luo, Jialun, van Deurzen, Len, Xing, Huili (Grace), Jena, Debdeep, Fuchs, Gregory David, Rana, Farhan
Publicado 2023

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

por Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, Cho, YongJin
Publicado 2022

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

por Gupta, Priti, Rahman, A. A., Subramanian, Shruti, Gupta, Shalini, Thamizhavel, Arumugam, Orlova, Tatyana, Rouvimov, Sergei, Vishwanath, Suresh, Protasenko, Vladimir, Laskar, Masihhur R., Xing, Huili Grace, Jena, Debdeep, Bhattacharya, Arnab
Publicado 2016

Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

por Yu, Tianlun, Wright, John, Khalsa, Guru, Pamuk, Betül, Chang, Celesta S., Matveyev, Yury, Wang, Xiaoqiang, Schmitt, Thorsten, Feng, Donglai, Muller, David A., Xing, Huili Grace, Jena, Debdeep, Strocov, Vladimir N.
Publicado 2021

An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

por Dang, Phillip, Khalsa, Guru, Chang, Celesta S., Katzer, D. Scott, Nepal, Neeraj, Downey, Brian P., Wheeler, Virginia D., Suslov, Alexey, Xie, Andy, Beam, Edward, Cao, Yu, Lee, Cathy, Muller, David A., Xing, Huili Grace, Meyer, David J., Jena, Debdeep
Publicado 2021