Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al(0.25)Ga(0.75)N/GaN Quantum Point Contacts

por Lu, Fangchao, Tang, Ning, Shang, Liangliang, Guan, Hongming, Xu, Fujun, Ge, Weikun, Shen, Bo
Publicado 2017

Spin transport study in a Rashba spin-orbit coupling system

por Mei, Fuhong, Zhang, Shan, Tang, Ning, Duan, Junxi, Xu, Fujun, Chen, Yonghai, Ge, Weikun, Shen, Bo
Publicado 2014

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

por Wang, Jiaming, Xu, Fujun, He, Chenguang, Zhang, Lisheng, Lu, Lin, Wang, Xinqiang, Qin, Zhixin, Shen, Bo
Publicado 2017

Free and bound excitonic effects in Al(0.5)Ga(0.5)N/Al(0.35)Ga(0.65)N MQWs with different Si-doping levels in the well layers

por He, Chenguang, Qin, Zhixin, Xu, Fujun, Hou, Mengjun, Zhang, Shan, Zhang, Lisheng, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Publicado 2015

Local surface plasmon enhanced polarization and internal quantum efficiency of deep ultraviolet emissions from AlGaN-based quantum wells

por Zhang, Cai, Tang, Ning, Shang, Liangliang, Fu, Lei, Wang, Weiying, Xu, Fujun, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Publicado 2017

Bio-Inspired Hierarchical Carbon Nanotube Yarn with Ester Bond Cross-Linkages towards High Conductivity for Multifunctional Applications

por Saleemi, Sidra, Aouraghe, Mohamed Amine, Wei, Xiaoxiao, Liu, Wei, Liu, Li, Siyal, M. Irfan, Bae, Jihyun, Xu, Fujun
Publicado 2022

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

por He, Chenguang, Qin, Zhixin, Xu, Fujun, Zhang, Lisheng, Wang, Jiaming, Hou, Mengjun, Zhang, Shan, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Publicado 2016

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

por Zhang, Lisheng, Xu, Fujun, Wang, Jiaming, He, Chenguang, Guo, Weiwei, Wang, Mingxing, Sheng, Bowen, Lu, Lin, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Publicado 2016

Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi(2)Se(3) Gated by Ionic Liquid

por Duan, Junxi, Tang, Ning, He, Xin, Yan, Yuan, Zhang, Shan, Qin, Xudong, Wang, Xinqiang, Yang, Xuelin, Xu, Fujun, Chen, Yonghai, Ge, Weikun, Shen, Bo
Publicado 2014

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

por Wang, Jiaming, Wang, Mingxing, Xu, Fujun, Liu, Baiyin, Lang, Jing, Zhang, Na, Kang, Xiangning, Qin, Zhixin, Yang, Xuelin, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Publicado 2022

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

por Cheng, Jianpeng, Yang, Xuelin, Sang, Ling, Guo, Lei, Zhang, Jie, Wang, Jiaming, He, Chenguang, Zhang, Lisheng, Wang, Maojun, Xu, Fujun, Tang, Ning, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Publicado 2016

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer

por Wang, Shibo, Wang, Xinqiang, Chen, Zhaoying, Wang, Ping, Qi, Qi, Zheng, Xiantong, Sheng, Bowen, Liu, Huapeng, Wang, Tao, Rong, Xin, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Shen, Bo
Publicado 2018

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In(0.17)Al(0.83)N/GaN heterostructures

por Wang, Jiaming, Xu, Fujun, Zhang, Xia, An, Wei, Li, Xin-Zheng, Song, Jie, Ge, Weikun, Tian, Guangshan, Lu, Jing, Wang, Xinqiang, Tang, Ning, Yang, Zhijian, Li, Wei, Wang, Weiying, Jin, Peng, Chen, Yonghai, Shen, Bo
Publicado 2014

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

por Liu, Fang, Yu, Ye, Zhang, Yuantao, Rong, Xin, Wang, Tao, Zheng, Xiantong, Sheng, Bowen, Yang, Liuyun, Wei, Jiaqi, Wang, Xuepeng, Li, Xianbin, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Zhaohui, Shen, Bo, Wang, Xinqiang
Publicado 2020

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

por Ma, Dingyu, Rong, Xin, Zheng, Xiantong, Wang, Weiying, Wang, Ping, Schulz, Tobias, Albrecht, Martin, Metzner, Sebastian, Müller, Mathias, August, Olga, Bertram, Frank, Christen, Jürgen, Jin, Peng, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Ge, Weikun, Shen, Bo, Wang, Xinqiang
Publicado 2017

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

por Wang, Tao, Wang, Xinqiang, Chen, Zhaoying, Sun, Xiaoxiao, Wang, Ping, Zheng, Xiantong, Rong, Xin, Yang, Liuyun, Guo, Weiwei, Wang, Ding, Cheng, Jianpeng, Lin, Xi, Li, Peng, Li, Jun, He, Xin, Zhang, Qiang, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Ge, Weikun, Zhang, Xixiang, Shen, Bo
Publicado 2018