Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

por Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Yao, Jiaxin, Zhang, Zhaohao, Zhu, Xiaohui, Wang, Guilei, Li, Junjie, Zhang, Yongkui, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Xu, Qiuxia, Yin, Huaxiang, Luo, Jun, Wang, Wenwu, Ye, Tianchun
Publicado 2021

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

por Zhang, Qingzhu, Gu, Jie, Xu, Renren, Cao, Lei, Li, Junjie, Wu, Zhenhua, Wang, Guilei, Yao, Jiaxin, Zhang, Zhaohao, Xiang, Jinjuan, He, Xiaobin, Kong, Zhenzhen, Yang, Hong, Tian, Jiajia, Xu, Gaobo, Mao, Shujuan, Radamson, Henry H., Yin, Huaxiang, Luo, Jun
Publicado 2021