β-Ga(2)O(3) Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications

por Si, Mengwei, Yang, Lingming, Zhou, Hong, Ye, Peide D.
Publicado 2017

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

por Yang, Lingming, Charnas, Adam, Qiu, Gang, Lin, Yu-Ming, Lu, Chun-Chieh, Tsai, Wilman, Paduano, Qing, Snure, Michael, Ye, Peide D.
Publicado 2017