Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge(1−x)Sn(x)) Fin Structure

por Wang, Wei, Lei, Dian, Dong, Yuan, Gong, Xiao, Tok, Eng Soon, Yeo, Yee-Chia
Publicado 2017

Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

por Wang, Weijie, Loke, Desmond, Shi, Luping, Zhao, Rong, Yang, Hongxin, Law, Leong-Tat, Ng, Lung-Tat, Lim, Kian-Guan, Yeo, Yee-Chia, Chong, Tow-Chong, Lacaita, Andrea L.
Publicado 2012

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

por Holland, Martin, van Dal, Mark, Duriez, Blandine, Oxland, Richard, Vellianitis, Georgios, Doornbos, Gerben, Afzalian, Aryan, Chen, Ta-Kun, Hsieh, Chih-Hua, Ramvall, Peter, Vasen, Tim, Yeo, Yee-Chia, Passlack, Matthias
Publicado 2017