Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

por Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan
Publicado 2021

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

por Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publicado 2020

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

por Han, Zhanfei, Li, Xiangdong, Wang, Hongyue, Yuan, Jiahui, Wang, Junbo, Wang, Meng, Yang, Weitao, You, Shuzhen, Chang, Jingjing, Zhang, Jincheng, Hao, Yue
Publicado 2023

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

por Li, Xiangdong, Wang, Meng, Zhang, Jincheng, Gao, Rui, Wang, Hongyue, Yang, Weitao, Yuan, Jiahui, You, Shuzhen, Chang, Jingjing, Liu, Zhihong, Hao, Yue
Publicado 2023

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(−)n Diodes: The Road to Reliable Vertical MOSFETs

por Mukherjee, Kalparupa, De Santi, Carlo, Buffolo, Matteo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Gerosa, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publicado 2021

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

por Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, Geens, Karen, You, Shuzhen, Bakeroot, Benoit, Decoutere, Stefaan, Diehle, Patrick, Hübner, Susanne, Altmann, Frank, Buffolo, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publicado 2021