“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes

por Chang, Guo-En, Yu, Shui-Qing, Sun, Greg
Publicado 2023

Design and optimization of high temperature optocouplers as galvanic isolation

por Sabbar, Abbas, Madhusoodhanan, Syam, Tran, Huong, Dong, Binzhong, Wang, Jiangbo, Mantooth, Alan, Yu, Shui-Qing, Chen, Zhong
Publicado 2022

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules

por Madhusoodhanan, Syam, Sabbar, Abbas, Tran, Huong, Lai, Pengyu, Gonzalez, David, Mantooth, Alan, Yu, Shui-Qing, Chen, Zhong
Publicado 2022

Toward Single Atom Chains with Exfoliated Tellurium

por Churchill, Hugh O. H., Salamo, Gregory J., Yu, Shui-Qing, Hironaka, Takayuki, Hu, Xian, Stacy, Jeb, Shih, Ishiang
Publicado 2017

Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission

por Abernathy, Grey, Ojo, Solomon, Said, Abdulla, Grant, Joshua M., Zhou, Yiyin, Stanchu, Hryhorii, Du, Wei, Li, Baohua, Yu, Shui-Qing
Publicado 2023

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

por Li, Zhenhua, Wu, Jiang, Wang, Zhiming M, Fan, Dongsheng, Guo, Aqiang, Li, Shibing, Yu, Shui-Qing, Manasreh, Omar, Salamo, Gregory J
Publicado 2010

Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications

por Lai, Pengyu, Gonzalez, David, Madhusoodhanan, Syam, Sabbar, Abbas, Ahmed, Salahaldein, Dong, Binzhong, Wang, Jiangbo, Mantooth, H. Alan, Yu, Shui-Qing, Chen, Zhong
Publicado 2022

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

por Sabbar, Abbas, Madhusoodhanan, Syam, Al-Kabi, Sattar, Dong, Binzhong, Wang, Jiangbo, Atcitty, Stanley, Kaplar, Robert, Ding, Ding, Mantooth, Alan, Yu, Shui-Qing, Chen, Zhong
Publicado 2019

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

por Dou, Wei, Benamara, Mourad, Mosleh, Aboozar, Margetis, Joe, Grant, Perry, Zhou, Yiyin, Al-Kabi, Sattar, Du, Wei, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing
Publicado 2018

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

por Grant, Joshua, Abernathy, Grey, Olorunsola, Oluwatobi, Ojo, Solomon, Amoah, Sylvester, Wanglia, Emmanuel, Saha, Samir K., Sabbar, Abbas, Du, Wei, Alher, Murtadha, Li, Bao-Hua, Yu, Shui-Qing
Publicado 2021

Ge(1−x)Sn(x) alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

por Eales, Timothy D., Marko, Igor P., Schulz, Stefan, O’Halloran, Edmond, Ghetmiri, Seyed, Du, Wei, Zhou, Yiyin, Yu, Shui-Qing, Margetis, Joe, Tolle, John, O’Reilly, Eoin P., Sweeney, Stephen J.
Publicado 2019