Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment

por Yuan, Fang-Yuan, Deng, Ning, Shih, Chih-Cheng, Tseng, Yi-Ting, Chang, Ting-Chang, Chang, Kuan-Chang, Wang, Ming-Hui, Chen, Wen-Chung, Zheng, Hao-Xuan, Wu, Huaqiang, Qian, He, Sze, Simon M.
Publicado 2017