Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

por Zagni, Nicolò, Verzellesi, Giovanni, Chini, Alessandro
Publicado 2022

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

por Zagni, Nicolò, Chini, Alessandro, Puglisi, Francesco Maria, Pavan, Paolo, Verzellesi, Giovanni
Publicado 2021

Highly sensitive active pixel image sensor array driven by large-area bilayer MoS(2) transistor circuitry

por Hong, Seongin, Zagni, Nicolò, Choo, Sooho, Liu, Na, Baek, Seungho, Bala, Arindam, Yoo, Hocheon, Kang, Byung Ha, Kim, Hyun Jae, Yun, Hyung Joong, Alam, Muhammad Ashraful, Kim, Sunkook
Publicado 2021