A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO(2) Gate Insulator TFT with a High Concentration Precursor

por Cai, Wei, Zhu, Zhennan, Wei, Jinglin, Fang, Zhiqiang, Ning, Honglong, Zheng, Zeke, Zhou, Shangxiong, Yao, Rihui, Peng, Junbiao, Lu, Xubing
Publicado 2017

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al(2)O(3) Nanolaminate Structure Processed at Room Temperature

por Yao, Rihui, Li, Xiaoqing, Zheng, Zeke, Zhang, Xiaochen, Xiong, Mei, Xiao, Song, Ning, Honglong, Wang, Xiaofeng, Wu, Yuxiang, Peng, Junbiao
Publicado 2018

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

por Yao, Rihui, Zheng, Zeke, Zeng, Yong, Liu, Xianzhe, Ning, Honglong, Hu, Shiben, Tao, Ruiqiang, Chen, Jianqiu, Cai, Wei, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Publicado 2017