High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

por Zhu, Jiaduo, Ning, Jing, Wang, Dong, Zhang, Jincheng, Guo, Lixin, Hao, Yue
Publicado 2019

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

por Duan, Xiaoling, Zhang, Jincheng, Chen, Jiabo, Zhang, Tao, Zhu, Jiaduo, Lin, Zhiyu, Hao, Yue
Publicado 2019