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| LEADER |
00000cam a22000002a 4500 |
| 001 |
ocn229342619 |
| 003 |
OCoLC |
| 005 |
20141204201108.0 |
| 008 |
100511s2008 nyua b 001 0 eng d |
| 010 |
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|a 2008023105
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| 035 |
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|a (Sirsi) i9781604567625
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| 040 |
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|a DLC
|c DLC
|d UV#
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| 020 |
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|a 9781604567625 (hardcover : alk. paper)
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| 050 |
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4 |
|a TK7871.95
|b M667 2008
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| 082 |
0 |
0 |
|a 621.3815/284
|2 22
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| 245 |
0 |
0 |
|a MOSFETs :
|b properties, preparations and performance /
|c [ed. por] Noah T. Andre y Lucas M. Simon.
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| 260 |
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|a New York :
|b Nova Science Publishers,
|c c2008.
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| 300 |
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|a xiii, 454 p. :
|b il. (algunas col.) ;
|c 27 cm.
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| 504 |
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|a Incluye bibliografías e índice.
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| 650 |
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4 |
|a Transistores de efecto de campo.
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| 630 |
0 |
0 |
|a MOS-FET.
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| 700 |
1 |
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|a Andre, Noah T.
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| 700 |
1 |
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|a Simon, Lucas M.
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| 856 |
4 |
1 |
|3 Table of contents only
|u http://www.loc.gov/catdir/toc/fy0906/2008023105.html
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| 901 |
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|a Z0
|b UV#
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| 596 |
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|a 39
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| 942 |
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|c LIBRO
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| 999 |
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|c 233252
|d 233252
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