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20170517133638.0 |
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100723s1999 nyua b 001 0 eng d |
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|c 235008
|d 235008
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|a 0195170148 (pasta dura)
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|a 9780195170146 (pasta dura)
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|a DLC
|b spa
|c DLC
|d UV#
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|a TK7871.99.M44
|b T74 1999b
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|a 621.3815/284
|2 22
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|a Tsividis, Yannis.
|9 382447
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|a Operation and modeling of the MOS transistor /
|c Yannis Tsividis.
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246 |
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|a MOS transistor
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250 |
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|a 2nd ed.
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260 |
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|a New York :
|b Oxford University Press,
|c c1999.
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|a xx, 620 p. :
|b il. ;
|c 24 cm.
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|a Incluye bibliografías e índice.
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650 |
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|a Semiconductores de metal-óxido complementarios
|9 363623
|x Modelos matemáticos.
|
650 |
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4 |
|a Semiconductores de metal-óxido complementarios
|9 363623
|x Efectos transistorios
|x Electrónica digital
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4 |
1 |
|u http://www.loc.gov/catdir/enhancements/fy0615/2003283093-t.html
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|a Z0
|b UV#
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|a DGBUV
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|c LIBRO
|6 _
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