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|a Bhattacharyya, A. B.
|q (Amalendu Bhushan)
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| 245 |
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|a Compact MOSFET models for VLSI design /
|c A.B. Bhattacharyya.
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| 260 |
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|a Singapore ;
|a Hoboken, NJ :
|b John Wiley & Sons (Asia) ;
|a [Piscataway, NJ] :
|b IEEE Press,
|c c2009.
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| 300 |
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|a xxiv, 432 p. :
|b il. ;
|c 26 cm.
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| 504 |
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|a Incluye bibliografías.
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|a Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.
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| 650 |
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|a Circuitos integrados
|x Diseño y construcción.
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|a Semiconductores
|x Diseño y construcción.
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| 856 |
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|m DE-576;wiley
|q image/jpeg
|u http://swbplus.bsz-bw.de/bsz307441342cov.htm
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