|
|
|
|
| LEADER |
00000cam a2200000 a 4500 |
| 008 |
890331s1990 nyua b 001 0 eng |
| 020 |
|
|
|a 0070541205
|
| 035 |
|
|
|a (Sirsi) i9780070541207
|
| 050 |
0 |
0 |
|a TK7871.86
|b .R68
|
| 082 |
0 |
0 |
|a 621.381/522
|2 20
|
| 100 |
1 |
|
|a Roulston, David J.
|
| 245 |
1 |
0 |
|a Bipolar semiconductor devices /
|c David J. Roulston.
|
| 260 |
|
|
|a New York :
|b McGraw-Hill,
|c c1990.
|
| 300 |
|
|
|a xxi, 422 p. :
|b ill. ;
|c 25 cm.
|
| 490 |
0 |
0 |
|a McGraw-Hill series in electrical engineering.
|a Electronics and electronic circuits
|
| 504 |
|
|
|a Incluye Indice (417-422 p).
|
| 505 |
0 |
|
|a Overview of basic semiconductor properties -- PN and NN+ junction -- PN junction diodes -- Transient and high frequency behavior of diodes -- Structure and theory of practical diodes -- Photodetector diodes and solar cells -- Bipolar transistors -- Analysis with real impurity profiles -- Real impurity profiles -- High current effects in bipolar transistors -- Transient behavior of transistors -- Discrete bipolar transistor structures -- Integrated transistors -- Advanced technology devices -- Numerical analysis and CAD models of bipolar transistors.
|
| 650 |
|
0 |
|a Diodos, Semiconductores
|x Diseño y Cosntrucción
|
| 653 |
|
|
|a Semiconductors
|
| 596 |
|
|
|a 59 72
|
| 942 |
|
|
|c LIBRO
|6 _
|
| 999 |
|
|
|c 94285
|d 94285
|
