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010427s1989 nyua b 000 0 eng d |
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|a 047182867X
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| 035 |
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|a (Sirsi) i9780471828679
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|a DLC
|d UV#
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| 050 |
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|a TK7871.95
|b G72
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| 082 |
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|a 621.3815/28
|2 19
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| 100 |
1 |
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|a Grant, Duncan Andrew.
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| 245 |
1 |
0 |
|a Power MOSFETS :
|b theory and applications /
|c Duncan A. Grant, John Gowar.
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| 260 |
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|a New York :
|b Wiley & Sons,
|c c1989.
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| 300 |
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|a xv, 504 p. :
|b il. ;
|c 26 cm.
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| 500 |
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|a "A Wiley-Interscience publication."
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| 504 |
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|a Incluye bibliografías.
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| 650 |
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4 |
|a Semiconductores.
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| 650 |
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4 |
|a Transistores de efecto de campo.
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| 700 |
1 |
2 |
|a Gowar, John,
|d 1945-
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| 901 |
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|a Z0
|b UV#
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| 902 |
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|a DGBUV
|
| 596 |
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|a 16
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| 942 |
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|c LIBRO
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| 999 |
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|c 97662
|d 97662
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