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Electrical resistivity of thin metal films
The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate th...
Autores principales: | , |
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Lenguaje: | eng |
Publicado: |
Springer
2007
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/3-540-48490-6 http://cds.cern.ch/record/1012802 |
_version_ | 1780911911040188416 |
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author | Wissmann, Peter Finzel, Hans-Ulrich |
author_facet | Wissmann, Peter Finzel, Hans-Ulrich |
author_sort | Wissmann, Peter |
collection | CERN |
description | The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis. |
id | cern-1012802 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2007 |
publisher | Springer |
record_format | invenio |
spelling | cern-10128022021-04-22T02:03:27Zdoi:10.1007/3-540-48490-6http://cds.cern.ch/record/1012802engWissmann, PeterFinzel, Hans-UlrichElectrical resistivity of thin metal filmsEngineeringThe aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.Springeroai:cds.cern.ch:10128022007 |
spellingShingle | Engineering Wissmann, Peter Finzel, Hans-Ulrich Electrical resistivity of thin metal films |
title | Electrical resistivity of thin metal films |
title_full | Electrical resistivity of thin metal films |
title_fullStr | Electrical resistivity of thin metal films |
title_full_unstemmed | Electrical resistivity of thin metal films |
title_short | Electrical resistivity of thin metal films |
title_sort | electrical resistivity of thin metal films |
topic | Engineering |
url | https://dx.doi.org/10.1007/3-540-48490-6 http://cds.cern.ch/record/1012802 |
work_keys_str_mv | AT wissmannpeter electricalresistivityofthinmetalfilms AT finzelhansulrich electricalresistivityofthinmetalfilms |