Evaluation of the radiation tolerance of SiGe heterojunction bipolar transistors under 24 GeV proton exposure

For the potential use in future high luminosity applications in high energy physics (HEP) (e.g. the Large Hadron Collider (LHC) upgrade), we evaluated the radiation hardness of a candidate technology for the front-end of the readout application-specific integrated circuit (ASIC) for silicon strip de...

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Detalles Bibliográficos
Autores principales: Metcalfe, J, Dorfan, D E, Grillo, A A, Jones, A, Mendoza, M, Rogers, M, Sadrozinski, H F W, Seiden, A, Spencer, E, Wilder, M, Cressler, J D, Prakash, G, Sutton, A
Lenguaje:eng
Publicado: 2006
Materias:
Nuclear Physics
Acceso en línea:http://cds.cern.ch/record/1023450

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