Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC

For the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar- CMOS and Silicon-Germanium are presently offered in deepsubmicron (250 down to 90nm) at affordable cost through worldwide...

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Detalles Bibliográficos
Autores principales: Genat, J F, Dhellot, M, David, J, Fougeron, S, Hermel, R, Lebbolo, H, Pham, T H, Savoy-Navarro, A, Sefri, R, Vilalte, s
Lenguaje:eng
Publicado: CERN 2007
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.5170/CERN-2007-001.249
http://cds.cern.ch/record/1027473
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author Genat, J F
Dhellot, M
David, J
Fougeron, S
Hermel, R
Lebbolo, H
Pham, T H
Savoy-Navarro, A
Sefri, R
Vilalte, s
author_facet Genat, J F
Dhellot, M
David, J
Fougeron, S
Hermel, R
Lebbolo, H
Pham, T H
Savoy-Navarro, A
Sefri, R
Vilalte, s
author_sort Genat, J F
collection CERN
description For the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar- CMOS and Silicon-Germanium are presently offered in deepsubmicron (250 down to 90nm) at affordable cost through worldwide integrated circuits multiproject centers. As an example, a 180nm CMOS readout prototype chip has been designed and tested, and gave satisfactory results in terms of noise and power. Beam tests are under work, and prospectives in 130nm will be presented.
id cern-1027473
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2007
publisher CERN
record_format invenio
spelling cern-10274732019-09-30T06:29:59Zdoi:10.5170/CERN-2007-001.249http://cds.cern.ch/record/1027473engGenat, J FDhellot, MDavid, JFougeron, SHermel, RLebbolo, HPham, T HSavoy-Navarro, ASefri, RVilalte, sFront-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILCAccelerators and Storage RingsFor the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar- CMOS and Silicon-Germanium are presently offered in deepsubmicron (250 down to 90nm) at affordable cost through worldwide integrated circuits multiproject centers. As an example, a 180nm CMOS readout prototype chip has been designed and tested, and gave satisfactory results in terms of noise and power. Beam tests are under work, and prospectives in 130nm will be presented.CERNoai:cds.cern.ch:10274732007
spellingShingle Accelerators and Storage Rings
Genat, J F
Dhellot, M
David, J
Fougeron, S
Hermel, R
Lebbolo, H
Pham, T H
Savoy-Navarro, A
Sefri, R
Vilalte, s
Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC
title Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC
title_full Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC
title_fullStr Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC
title_full_unstemmed Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC
title_short Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC
title_sort front-end electronics for silicon trackers readout in deep sub-micron cmos technology: the case of silicon strips at the ilc
topic Accelerators and Storage Rings
url https://dx.doi.org/10.5170/CERN-2007-001.249
http://cds.cern.ch/record/1027473
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