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Radiation hardness of diamond and silicon sensors compared

The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing En...

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Detalles Bibliográficos
Autores principales: de Boer, Wim, Bol, Johannes, Furgeri, Alexander, Mueller, Steffen, Sander, Christian, Berdermann, Eleni, Pomorski, Michal, Huhtinen, Mika
Lenguaje:eng
Publicado: 2007
Materias:
Acceso en línea:https://dx.doi.org/10.1002/pssa.200776327
http://cds.cern.ch/record/1032645
Descripción
Sumario:The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.