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MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology

Detalles Bibliográficos
Autor principal: Crawford, Robert H
Lenguaje:eng
Publicado: McGraw-Hill 1967
Materias:
Acceso en línea:http://cds.cern.ch/record/103339
_version_ 1780876874156605440
author Crawford, Robert H
author_facet Crawford, Robert H
author_sort Crawford, Robert H
collection CERN
id cern-103339
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1967
publisher McGraw-Hill
record_format invenio
spelling cern-1033392021-04-22T05:58:17Zhttp://cds.cern.ch/record/103339engCrawford, Robert HMOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technologyEngineeringMcGraw-Hilloai:cds.cern.ch:1033391967
spellingShingle Engineering
Crawford, Robert H
MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
title MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
title_full MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
title_fullStr MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
title_full_unstemmed MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
title_short MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
title_sort mosfet in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
topic Engineering
url http://cds.cern.ch/record/103339
work_keys_str_mv AT crawfordroberth mosfetincircuitdesignmetaloxidesemiconductorfieldeffecttransistorsfordiscreteandintegratedcircuittechnology