Properties of LuAP: CE scintillator containing intentional impurities

Single crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorp...

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Detalles Bibliográficos
Autores principales: Petrosyan, A G, Derdzyan, M, Ovanesyan, K, Lecoq, Paul, Auffray, Etiennette, Trummer, Julia, Kronberger, Matthias, Pédrini, C, Dujardin, C, Anfre, P
Lenguaje:eng
Publicado: 2007
Materias:
Health Physics and Radiation Effects
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2006.10.093
http://cds.cern.ch/record/1035250
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author Petrosyan, A G
Derdzyan, M
Ovanesyan, K
Lecoq, Paul
Auffray, Etiennette
Trummer, Julia
Kronberger, Matthias
Pédrini, C
Dujardin, C
Anfre, P
author_facet Petrosyan, A G
Derdzyan, M
Ovanesyan, K
Lecoq, Paul
Auffray, Etiennette
Trummer, Julia
Kronberger, Matthias
Pédrini, C
Dujardin, C
Anfre, P
author_sort Petrosyan, A G
collection CERN
description Single crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorption coefficients at 260 nm less than 2 cm−1 have been recorded in LuAP:Ce crystals containing tetravalent ions that are lower than the corresponding figures (5–6 cm−1) measured in undoped LuAP. At high concentrations of added impurities, despite of suppression of the parasitic underlying absorption below 300 nm, the slope of the optical edge and transmission in the range of emission are seriously damaged. Scintillation parameters of crystals with added impurities are compared to those of LuAP:Ce.
id cern-1035250
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2007
record_format invenio
spelling cern-10352502019-09-30T06:29:59Zdoi:10.1016/j.nima.2006.10.093http://cds.cern.ch/record/1035250engPetrosyan, A GDerdzyan, MOvanesyan, KLecoq, PaulAuffray, EtiennetteTrummer, JuliaKronberger, MatthiasPédrini, CDujardin, CAnfre, PProperties of LuAP: CE scintillator containing intentional impuritiesHealth Physics and Radiation EffectsSingle crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorption coefficients at 260 nm less than 2 cm−1 have been recorded in LuAP:Ce crystals containing tetravalent ions that are lower than the corresponding figures (5–6 cm−1) measured in undoped LuAP. At high concentrations of added impurities, despite of suppression of the parasitic underlying absorption below 300 nm, the slope of the optical edge and transmission in the range of emission are seriously damaged. Scintillation parameters of crystals with added impurities are compared to those of LuAP:Ce.oai:cds.cern.ch:10352502007
spellingShingle Health Physics and Radiation Effects
Petrosyan, A G
Derdzyan, M
Ovanesyan, K
Lecoq, Paul
Auffray, Etiennette
Trummer, Julia
Kronberger, Matthias
Pédrini, C
Dujardin, C
Anfre, P
Properties of LuAP: CE scintillator containing intentional impurities
title Properties of LuAP: CE scintillator containing intentional impurities
title_full Properties of LuAP: CE scintillator containing intentional impurities
title_fullStr Properties of LuAP: CE scintillator containing intentional impurities
title_full_unstemmed Properties of LuAP: CE scintillator containing intentional impurities
title_short Properties of LuAP: CE scintillator containing intentional impurities
title_sort properties of luap: ce scintillator containing intentional impurities
topic Health Physics and Radiation Effects
url https://dx.doi.org/10.1016/j.nima.2006.10.093
http://cds.cern.ch/record/1035250
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