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Properties of LuAP: CE scintillator containing intentional impurities
Single crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorp...
Autores principales: | , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2007
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2006.10.093 http://cds.cern.ch/record/1035250 |