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Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices

Detalles Bibliográficos
Autor principal: Gerardin, S
Lenguaje:eng
Publicado: 2006
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TNS.2006.880943
http://cds.cern.ch/record/1035605
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author Gerardin, S
author_facet Gerardin, S
author_sort Gerardin, S
collection CERN
id cern-1035605
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2006
record_format invenio
spelling cern-10356052019-09-30T06:29:59Zdoi:10.1109/TNS.2006.880943http://cds.cern.ch/record/1035605engGerardin, SImpact of 24-GeV proton irradiation on 0.13-mu-m CMOS devicesDetectors and Experimental TechniquesHealth Physics and Radiation Effectsoai:cds.cern.ch:10356052006
spellingShingle Detectors and Experimental Techniques
Health Physics and Radiation Effects
Gerardin, S
Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices
title Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices
title_full Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices
title_fullStr Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices
title_full_unstemmed Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices
title_short Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices
title_sort impact of 24-gev proton irradiation on 0.13-mu-m cmos devices
topic Detectors and Experimental Techniques
Health Physics and Radiation Effects
url https://dx.doi.org/10.1109/TNS.2006.880943
http://cds.cern.ch/record/1035605
work_keys_str_mv AT gerardins impactof24gevprotonirradiationon013mumcmosdevices