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Lattice location of implanted As in ZnO
Radioactive 73As ions were implanted into a ZnO single crystal at room temperature with 60 keV up to a fluence of 2×1013 cm−2. Subsequently, the angular emission channeling patterns of emitted conversion electrons were recorded by means of a position-sensitive detector in the as-implanted state and...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2007
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.spmi.2007.04.052 http://cds.cern.ch/record/1063843 |