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Characterisation of a semi 3-D sensor coupled to Medipix2
A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent (>99.9%). Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and en...
Autores principales: | , , , , , |
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Lenguaje: | eng |
Publicado: |
2007
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2007.06.054 http://cds.cern.ch/record/1066016 |
Sumario: | A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent (>99.9%). Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser. |
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