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Characterization of 150 $\mu$m thick epitaxial silicon detectors from different producers after proton irradiation
Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Coll...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2007
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2007.07.005 http://cds.cern.ch/record/1066628 |