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The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC

The proposed luminosity upgrade of the Large Hadron Collider (S‐LHC) at CERN represents a technological challenge for the vertex detectors of the SLHC experiments since the innermost layers will receive fast hadron fluences up to 1016 cm−2. The CERN RD50 project has been established to explore detec...

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Detalles Bibliográficos
Autor principal: Macchiolo, Anna
Lenguaje:eng
Publicado: 2005
Materias:
Acceso en línea:https://dx.doi.org/10.1063/1.2125676
http://cds.cern.ch/record/1083178
Descripción
Sumario:The proposed luminosity upgrade of the Large Hadron Collider (S‐LHC) at CERN represents a technological challenge for the vertex detectors of the SLHC experiments since the innermost layers will receive fast hadron fluences up to 1016 cm−2. The CERN RD50 project has been established to explore detector materials and designs that will allow to operate devices up to this limit. Among the different research lines followed by RD50 we report on the development of sensors produced with substrates like Czochralski and epitaxial silicon and on the investigation of the radiation hardness of p‐type silicon detectors. Moreover innovative designs like thin, 3D and 3D‐STC sensors are under evaluation in the RD50 Collaboration.