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The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC

The proposed luminosity upgrade of the Large Hadron Collider (S‐LHC) at CERN represents a technological challenge for the vertex detectors of the SLHC experiments since the innermost layers will receive fast hadron fluences up to 1016 cm−2. The CERN RD50 project has been established to explore detec...

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Autor principal: Macchiolo, Anna
Lenguaje:eng
Publicado: 2005
Materias:
Acceso en línea:https://dx.doi.org/10.1063/1.2125676
http://cds.cern.ch/record/1083178
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author Macchiolo, Anna
author_facet Macchiolo, Anna
author_sort Macchiolo, Anna
collection CERN
description The proposed luminosity upgrade of the Large Hadron Collider (S‐LHC) at CERN represents a technological challenge for the vertex detectors of the SLHC experiments since the innermost layers will receive fast hadron fluences up to 1016 cm−2. The CERN RD50 project has been established to explore detector materials and designs that will allow to operate devices up to this limit. Among the different research lines followed by RD50 we report on the development of sensors produced with substrates like Czochralski and epitaxial silicon and on the investigation of the radiation hardness of p‐type silicon detectors. Moreover innovative designs like thin, 3D and 3D‐STC sensors are under evaluation in the RD50 Collaboration.
id cern-1083178
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-10831782019-09-30T06:29:59Zdoi:10.1063/1.2125676http://cds.cern.ch/record/1083178engMacchiolo, AnnaThe CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHCDetectors and Experimental TechniquesThe proposed luminosity upgrade of the Large Hadron Collider (S‐LHC) at CERN represents a technological challenge for the vertex detectors of the SLHC experiments since the innermost layers will receive fast hadron fluences up to 1016 cm−2. The CERN RD50 project has been established to explore detector materials and designs that will allow to operate devices up to this limit. Among the different research lines followed by RD50 we report on the development of sensors produced with substrates like Czochralski and epitaxial silicon and on the investigation of the radiation hardness of p‐type silicon detectors. Moreover innovative designs like thin, 3D and 3D‐STC sensors are under evaluation in the RD50 Collaboration.oai:cds.cern.ch:10831782005
spellingShingle Detectors and Experimental Techniques
Macchiolo, Anna
The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC
title The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC
title_full The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC
title_fullStr The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC
title_full_unstemmed The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC
title_short The CERN RD50 Collaboration: Development of Radiation-Hard Semiconductor Detectors for Super-LHC
title_sort cern rd50 collaboration: development of radiation-hard semiconductor detectors for super-lhc
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1063/1.2125676
http://cds.cern.ch/record/1083178
work_keys_str_mv AT macchioloanna thecernrd50collaborationdevelopmentofradiationhardsemiconductordetectorsforsuperlhc
AT macchioloanna cernrd50collaborationdevelopmentofradiationhardsemiconductordetectorsforsuperlhc