Design of an integrated particle detector-cell based on latchup effect

The paper describes an innovative idea for a silicon pixel detector. The principle is based on latchup effect that is common in to-date CMOS technologies working in a radiation environment. A prototype was constructed in the past with commercial components and here is described in detail an integrated version of the design. In principle the detector has low triggering and dead time, can operate at room temperature, does not require a high voltage power supply and is intrinsically tolerant to radiation. As a latchup-based detector can be constructed using state-of-the-art CMOS technologies, here it is presented a design of a prototype that will be implemented on a commercial 0.35 μm Bi-CMOS technology and tested at Electronics Department of Torino Politecnico.