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Design of an integrated particle detector-cell based on latchup effect
The paper describes an innovative idea for a silicon pixel detector. The principle is based on latchup effect that is common in to-date CMOS technologies working in a radiation environment. A prototype was constructed in the past with commercial components and here is described in detail an integrat...
| Autores principales: | , |
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| Lenguaje: | eng |
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CERN
2007
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| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2007-007.445 http://cds.cern.ch/record/1091521 |