Cargando…
CERN_DxCTA counting mode chip
This ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 μm CMOS technology. The circuit comprises 128 channels equipped with a transi...
Autores principales: | , , |
---|---|
Lenguaje: | eng |
Publicado: |
2008
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2008.03.049 http://cds.cern.ch/record/1111413 |
_version_ | 1780914299280031744 |
---|---|
author | Moraes, D Kaplon, J Nygård, E |
author_facet | Moraes, D Kaplon, J Nygård, E |
author_sort | Moraes, D |
collection | CERN |
description | This ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 μm CMOS technology. The circuit comprises 128 channels equipped with a transimpedance amplifier followed by a gain shaper stage with 21 ns peaking time, two discriminators and two 18-bit counters. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. The amplifier shows a linear sensitivity of 118 mV/fC and an equivalent noise charge of about 711 e−, for a detector capacitance of 5 pF. Complete evaluation of the circuit is presented using electronic pulses and pixel detectors. |
id | cern-1111413 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2008 |
record_format | invenio |
spelling | cern-11114132019-09-30T06:29:59Zdoi:10.1016/j.nima.2008.03.049http://cds.cern.ch/record/1111413engMoraes, DKaplon, JNygård, ECERN_DxCTA counting mode chipDetectors and Experimental TechniquesHealth Physics and Radiation EffectsThis ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 μm CMOS technology. The circuit comprises 128 channels equipped with a transimpedance amplifier followed by a gain shaper stage with 21 ns peaking time, two discriminators and two 18-bit counters. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. The amplifier shows a linear sensitivity of 118 mV/fC and an equivalent noise charge of about 711 e−, for a detector capacitance of 5 pF. Complete evaluation of the circuit is presented using electronic pulses and pixel detectors.oai:cds.cern.ch:11114132008 |
spellingShingle | Detectors and Experimental Techniques Health Physics and Radiation Effects Moraes, D Kaplon, J Nygård, E CERN_DxCTA counting mode chip |
title | CERN_DxCTA counting mode chip |
title_full | CERN_DxCTA counting mode chip |
title_fullStr | CERN_DxCTA counting mode chip |
title_full_unstemmed | CERN_DxCTA counting mode chip |
title_short | CERN_DxCTA counting mode chip |
title_sort | cern_dxcta counting mode chip |
topic | Detectors and Experimental Techniques Health Physics and Radiation Effects |
url | https://dx.doi.org/10.1016/j.nima.2008.03.049 http://cds.cern.ch/record/1111413 |
work_keys_str_mv | AT moraesd cerndxctacountingmodechip AT kaplonj cerndxctacountingmodechip AT nygarde cerndxctacountingmodechip |