GaAs Medipix2 hybrid pixel detector

A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approx...

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Detalles Bibliográficos
Autores principales: Kostamo, P, Nenonen, S, Vähänen, S, Tlustos, L, Fröjdh, C, Campbell, M, Zhilyaev, Y, Lipsanen, H
Lenguaje:eng
Publicado: 2008
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2008.03.050
http://cds.cern.ch/record/1111414
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author Kostamo, P
Nenonen, S
Vähänen, S
Tlustos, L
Fröjdh, C
Campbell, M
Zhilyaev, Y
Lipsanen, H
author_facet Kostamo, P
Nenonen, S
Vähänen, S
Tlustos, L
Fröjdh, C
Campbell, M
Zhilyaev, Y
Lipsanen, H
author_sort Kostamo, P
collection CERN
description A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.
id cern-1111414
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2008
record_format invenio
spelling cern-11114142019-09-30T06:29:59Zdoi:10.1016/j.nima.2008.03.050http://cds.cern.ch/record/1111414engKostamo, PNenonen, SVähänen, STlustos, LFröjdh, CCampbell, MZhilyaev, YLipsanen, HGaAs Medipix2 hybrid pixel detectorDetectors and Experimental TechniquesA GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.oai:cds.cern.ch:11114142008
spellingShingle Detectors and Experimental Techniques
Kostamo, P
Nenonen, S
Vähänen, S
Tlustos, L
Fröjdh, C
Campbell, M
Zhilyaev, Y
Lipsanen, H
GaAs Medipix2 hybrid pixel detector
title GaAs Medipix2 hybrid pixel detector
title_full GaAs Medipix2 hybrid pixel detector
title_fullStr GaAs Medipix2 hybrid pixel detector
title_full_unstemmed GaAs Medipix2 hybrid pixel detector
title_short GaAs Medipix2 hybrid pixel detector
title_sort gaas medipix2 hybrid pixel detector
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2008.03.050
http://cds.cern.ch/record/1111414
work_keys_str_mv AT kostamop gaasmedipix2hybridpixeldetector
AT nenonens gaasmedipix2hybridpixeldetector
AT vahanens gaasmedipix2hybridpixeldetector
AT tlustosl gaasmedipix2hybridpixeldetector
AT frojdhc gaasmedipix2hybridpixeldetector
AT campbellm gaasmedipix2hybridpixeldetector
AT zhilyaevy gaasmedipix2hybridpixeldetector
AT lipsanenh gaasmedipix2hybridpixeldetector

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