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Extended defects in semiconductors: electronic properties, device effects and structures

Detalles Bibliográficos
Autores principales: Holt, D B, Yacobi, B G
Lenguaje:eng
Publicado: Cambridge Univ. Press 2007
Materias:
Acceso en línea:http://cds.cern.ch/record/1126060
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author Holt, D B
Yacobi, B G
author_facet Holt, D B
Yacobi, B G
author_sort Holt, D B
collection CERN
id cern-1126060
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2007
publisher Cambridge Univ. Press
record_format invenio
spelling cern-11260602021-04-22T01:45:04Zhttp://cds.cern.ch/record/1126060engHolt, D BYacobi, B GExtended defects in semiconductors: electronic properties, device effects and structuresEngineeringCambridge Univ. Pressoai:cds.cern.ch:11260602007
spellingShingle Engineering
Holt, D B
Yacobi, B G
Extended defects in semiconductors: electronic properties, device effects and structures
title Extended defects in semiconductors: electronic properties, device effects and structures
title_full Extended defects in semiconductors: electronic properties, device effects and structures
title_fullStr Extended defects in semiconductors: electronic properties, device effects and structures
title_full_unstemmed Extended defects in semiconductors: electronic properties, device effects and structures
title_short Extended defects in semiconductors: electronic properties, device effects and structures
title_sort extended defects in semiconductors: electronic properties, device effects and structures
topic Engineering
url http://cds.cern.ch/record/1126060
work_keys_str_mv AT holtdb extendeddefectsinsemiconductorselectronicpropertiesdeviceeffectsandstructures
AT yacobibg extendeddefectsinsemiconductorselectronicpropertiesdeviceeffectsandstructures