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Signal height in silicon pixel detectors irradiated with pions and protons

Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has th...

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Autores principales: Rohe, T., Acosta, J., Bean, A., Dambach, S., Erdmann, W., Langenegger, U., Martin, C., Meier, B., Radicci, V., Sibille, J., Trub, P.
Lenguaje:eng
Publicado: 2009
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2009.08.012
http://cds.cern.ch/record/1157130
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author Rohe, T.
Acosta, J.
Bean, A.
Dambach, S.
Erdmann, W.
Langenegger, U.
Martin, C.
Meier, B.
Radicci, V.
Sibille, J.
Trub, P.
author_facet Rohe, T.
Acosta, J.
Bean, A.
Dambach, S.
Erdmann, W.
Langenegger, U.
Martin, C.
Meier, B.
Radicci, V.
Sibille, J.
Trub, P.
author_sort Rohe, T.
collection CERN
description Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. In order to establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6E14 Neq/cm^2 at PSI and with protons up to 5E15 Neq/cm^2. The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kOhm cm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.
id cern-1157130
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
record_format invenio
spelling cern-11571302019-09-30T06:29:59Zdoi:10.1016/j.nima.2009.08.012http://cds.cern.ch/record/1157130engRohe, T.Acosta, J.Bean, A.Dambach, S.Erdmann, W.Langenegger, U.Martin, C.Meier, B.Radicci, V.Sibille, J.Trub, P.Signal height in silicon pixel detectors irradiated with pions and protonsphysics.ins-detPixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. In order to establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6E14 Neq/cm^2 at PSI and with protons up to 5E15 Neq/cm^2. The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kOhm cm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.arXiv:0901.3422oai:cds.cern.ch:11571302009-01-23
spellingShingle physics.ins-det
Rohe, T.
Acosta, J.
Bean, A.
Dambach, S.
Erdmann, W.
Langenegger, U.
Martin, C.
Meier, B.
Radicci, V.
Sibille, J.
Trub, P.
Signal height in silicon pixel detectors irradiated with pions and protons
title Signal height in silicon pixel detectors irradiated with pions and protons
title_full Signal height in silicon pixel detectors irradiated with pions and protons
title_fullStr Signal height in silicon pixel detectors irradiated with pions and protons
title_full_unstemmed Signal height in silicon pixel detectors irradiated with pions and protons
title_short Signal height in silicon pixel detectors irradiated with pions and protons
title_sort signal height in silicon pixel detectors irradiated with pions and protons
topic physics.ins-det
url https://dx.doi.org/10.1016/j.nima.2009.08.012
http://cds.cern.ch/record/1157130
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