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A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
A CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperature- and power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable...
Autores principales: | , |
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Lenguaje: | eng |
Publicado: |
CERN
2008
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-2008-008.494 http://cds.cern.ch/record/1159562 |
Sumario: | A CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperature- and power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable operation in harsh radiation environment possible. In the present design we utilize only MOS structures and poly-silicon resistors. The output current varies in the range 0.9 % when the circuit is being irradiated up to a 200 Mrad. |
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