A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.

A CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperature- and power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable...

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Detalles Bibliográficos
Autores principales: Gromov, V, Kluit, R
Lenguaje:eng
Publicado: CERN 2008
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2008-008.494
http://cds.cern.ch/record/1159562
_version_ 1780915849155051520
author Gromov, V
Kluit, R
author_facet Gromov, V
Kluit, R
author_sort Gromov, V
collection CERN
description A CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperature- and power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable operation in harsh radiation environment possible. In the present design we utilize only MOS structures and poly-silicon resistors. The output current varies in the range 0.9 % when the circuit is being irradiated up to a 200 Mrad.
id cern-1159562
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2008
publisher CERN
record_format invenio
spelling cern-11595622019-09-30T06:29:59Zdoi:10.5170/CERN-2008-008.494http://cds.cern.ch/record/1159562engGromov, VKluit, RA Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.Detectors and Experimental TechniquesA CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperature- and power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable operation in harsh radiation environment possible. In the present design we utilize only MOS structures and poly-silicon resistors. The output current varies in the range 0.9 % when the circuit is being irradiated up to a 200 Mrad.CERNoai:cds.cern.ch:11595622008
spellingShingle Detectors and Experimental Techniques
Gromov, V
Kluit, R
A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
title A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
title_full A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
title_fullStr A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
title_full_unstemmed A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
title_short A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
title_sort radiation hard current reference circuit in a standard 0.13μm cmos technology.
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2008-008.494
http://cds.cern.ch/record/1159562
work_keys_str_mv AT gromovv aradiationhardcurrentreferencecircuitinastandard013mmcmostechnology
AT kluitr aradiationhardcurrentreferencecircuitinastandard013mmcmostechnology
AT gromovv radiationhardcurrentreferencecircuitinastandard013mmcmostechnology
AT kluitr radiationhardcurrentreferencecircuitinastandard013mmcmostechnology

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