Cargando…
A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
A CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperature- and power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable...
Autores principales: | Gromov, V, Kluit, R |
---|---|
Lenguaje: | eng |
Publicado: |
CERN
2008
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-2008-008.494 http://cds.cern.ch/record/1159562 |
Ejemplares similares
-
Performance of the Bandgap Reference Circuit, designed in a commercial 0.13um CMOS Technology
por: Gromov, Vladimir
Publicado: (2005) -
Prototype of the front-end circuit for the GOSSIP (Gas On Slimmed Silicon Pixel) chip in the 0.13 μm CMOS technology
por: Gromov, V, et al.
Publicado: (2007) -
Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
por: Gromov, V
Publicado: (2004) -
Development of a small-scale protope of the GOSSIPO-2 chip in 0.13 um CMOS technology
por: Kluit, R, et al.
Publicado: (2007) -
A 0.13$\mu$m CMOS technology: Its radiation hardness and its application in high energy physics experiments
por: Hänsler, Kurt
Publicado: (2004)