Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement

Electric field magnitude and depletion in the bulk of silicon pixel detectors, which influence its breakdown behaviour, was studied using finite-element method to solve the drift-diffusion equation coupled to Poisson's equation in a simplified two dimensional model of the ATLAS pixel sensor. Ba...

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Detalles Bibliográficos
Autores principales: Benoit, M, Lounis, A, Dinu, N
Lenguaje:eng
Publicado: 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/4/03/P03025
http://cds.cern.ch/record/1207092
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author Benoit, M
Lounis, A
Dinu, N
author_facet Benoit, M
Lounis, A
Dinu, N
author_sort Benoit, M
collection CERN
description Electric field magnitude and depletion in the bulk of silicon pixel detectors, which influence its breakdown behaviour, was studied using finite-element method to solve the drift-diffusion equation coupled to Poisson's equation in a simplified two dimensional model of the ATLAS pixel sensor. Based on this model, the number of guard rings and dead edges width were modified to investigate their influence on the detector's depletion at the edge and on its internal electrical field distribution. Final ly, the 3 level model was implemented into the simulation to study the behaviour of such detector under different level of irradiation.
id cern-1207092
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
record_format invenio
spelling cern-12070922019-09-30T06:29:59Zdoi:10.1088/1748-0221/4/03/P03025http://cds.cern.ch/record/1207092engBenoit, MLounis, ADinu, NSimulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacementDetectors and Experimental TechniquesElectric field magnitude and depletion in the bulk of silicon pixel detectors, which influence its breakdown behaviour, was studied using finite-element method to solve the drift-diffusion equation coupled to Poisson's equation in a simplified two dimensional model of the ATLAS pixel sensor. Based on this model, the number of guard rings and dead edges width were modified to investigate their influence on the detector's depletion at the edge and on its internal electrical field distribution. Final ly, the 3 level model was implemented into the simulation to study the behaviour of such detector under different level of irradiation.oai:cds.cern.ch:12070922009
spellingShingle Detectors and Experimental Techniques
Benoit, M
Lounis, A
Dinu, N
Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement
title Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement
title_full Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement
title_fullStr Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement
title_full_unstemmed Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement
title_short Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement
title_sort simulation of guard ring influence on the performance of atlas pixel detectors for inner layer replacement
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/4/03/P03025
http://cds.cern.ch/record/1207092
work_keys_str_mv AT benoitm simulationofguardringinfluenceontheperformanceofatlaspixeldetectorsforinnerlayerreplacement
AT lounisa simulationofguardringinfluenceontheperformanceofatlaspixeldetectorsforinnerlayerreplacement
AT dinun simulationofguardringinfluenceontheperformanceofatlaspixeldetectorsforinnerlayerreplacement

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