Cargando…

Emission channeling lattice location experiments with short-lived isotopes

Detalles Bibliográficos
Autores principales:	Amorim, L, Araújo, JP, Bharuth-Ram, K, Correia, JG, Darakchieva, V, da Silva, MR, Decoster, S, Hofsäss, H, Nagl, M, Pereira, L, Vantomme, L, Vetter, U, Wahl, U
Publicado:	2010
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/1232263

Ejemplares similares

Alpha emission channeling lattice location experiments of $^{8}$B
por: Wahl, U, et al.
Publicado: (2010)

Emission channeling with short-lived isotopes: lattice location of impurities in semiconductors and oxides
por: Pereira, L M C, et al.
Publicado: (2013)

Emission channeling lattice location experiments with short-lived isotopes
por: Wahl, Ulrich, et al.
Publicado: (2014)

Emission channeling studies on the lattice location of lithium, sodium and rare earth isotopes in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1998)

$\alpha$-emission channeling investigations of the lattice location of Li in Ge
por: Wahl, U, et al.
Publicado: (1996)

Lattice location study of implanted In in Ge
por: Decoster, S, et al.
Publicado: (2009)

Lattice location of Fe in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Lattice location study of ion implanted Sn and Sn-related defects in Ge
por: Decoster, S, et al.
Publicado: (2010)

Lattice position and thermal stability of diluted As in Ge
por: Decoster, S, et al.
Publicado: (2012)

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types
por: Pereira, LMC, et al.
Publicado: (2011)

Lattice location of transition metals and rare earths in semiconductors
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted Ag in Si
por: Wahl, U, et al.
Publicado: (2003)

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
por: Pereira, LMC, et al.
Publicado: (2011)

Evidence of N substitution by Mn in GaN
por: Pereira, LMC, et al.
Publicado: (2013)

Emission channeling lattice location experiments with short-lived isotopes
por: Wahl, Ulrich, et al.
Publicado: (2006)

Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
por: De Vries, B, et al.
Publicado: (2003)

Lattice location of implanted Cu in highly doped Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of transition metals in semiconductors
por: Correia, J G, et al.
Publicado: (1998)

Lattice location of the group V elements As and Sb in ZnO
por: Wahl, U, et al.
Publicado: (2009)

Lattice location of ion implanted $^{8}$Li in Si studied by alpha emission channeling
por: Wahl, U, et al.
Publicado: (1992)

Lattice location and stability of ion implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of transition metals and rare earths in semiconductors
por: Wahl, U, et al.
Publicado: (2001)

Emission channeling studies on the lattice location of lithium, sodium and rare earth isotopes in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1996)

Lattice sites of ion implanted Cu atoms in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Lattice sites of ion-implanted Li in diamond
por: Restle, M, et al.
Publicado: (1995)

Precise lattice location of substitutional and interstitial Mg in AlN
por: Amorim, Lígia Marina, et al.
Publicado: (2013)

Annealing behavior and lattice site location of Er implanted InGaN
por: Alves, E, et al.
Publicado: (2003)

Diluted manganese on the bond-centered site in germanium
por: Decoster, S, et al.
Publicado: (2010)

Lattice location of ion-implanted radioactive dopants in compound semiconductors
por: Winter, S, et al.
Publicado: (1990)

Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
por: Wahl, U, et al.
Publicado: (2009)

Lattice location and optical activation of rare earth implanted GaN
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of the group V elements Sb, As, and P in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2010)

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE facility
por: Wahl, Ulrich, et al.
Publicado: (2014)

Crystal-field investigations of rare-earth-doped wide band gap semiconductors
por: Vetter, U, et al.
Publicado: (2009)

Lattice location of implanted transition metals in 3C–SiC
por: Granadeiro Costa, Angelo Rafael, et al.
Publicado: (2017)

Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
por: Costa, A. R. G., et al.
Publicado: (2019)

Lattice location and stability of implanted Cu in Ge
por: Wahl, U, et al.
Publicado: (2003)

Lattice site changes of ion implanted $^{8}$Li in Si studied by alpha emission
por: Wahl, U, et al.
Publicado: (1992)

Lattice site location and annealing behaviour of Ca and Sr implanted GaN
por: De Vries, Bart, et al.
Publicado: (2006)

Cannot write session to /tmp/vufind_sessions/sess_2t1evhk6knsr9dfbrqq2god6rq