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Reduction techniques of the back gate effect in the SOI Pixel Detector
We have fabricated monolithic pixel sensors in 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, consisting of a thick sensor layer and a thin circuit layer with an insulating buried-oxide, which has many advantages. However, it has been found that the applied electric field in the sensor layer als...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
CERN
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2009-006.68 http://cds.cern.ch/record/1234869 |