Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips

We present the first measurements of the performance of the Medipix3 hybrid pixel readout chip after exposure to significant x-ray flux. Specifically the changes in performance of the mixed mode pixel architecture, the digital periphery, digital to analogue converters and the e-fuse technology were...

Descripción completa

Detalles Bibliográficos
Autores principales: Plackett, R, Llopart, X, Ballabriga, R, Campbell, M, Tlustos, L, Wong, W
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.157
http://cds.cern.ch/record/1234886
_version_ 1780918528674627584
author Plackett, R
Llopart, X
Ballabriga, R
Campbell, M
Tlustos, L
Wong, W
author_facet Plackett, R
Llopart, X
Ballabriga, R
Campbell, M
Tlustos, L
Wong, W
author_sort Plackett, R
collection CERN
description We present the first measurements of the performance of the Medipix3 hybrid pixel readout chip after exposure to significant x-ray flux. Specifically the changes in performance of the mixed mode pixel architecture, the digital periphery, digital to analogue converters and the e-fuse technology were characterised. A high intensity, calibrated x- ray source was used to incrementally irradiate the separate regions of the detector whilst it was powered. This is the first total ionizing dose study of a large area pixel detector fabricated using the 130nm CMOS technology.
id cern-1234886
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher CERN
record_format invenio
spelling cern-12348862019-09-30T06:29:59Zdoi:10.5170/CERN-2009-006.157http://cds.cern.ch/record/1234886engPlackett, RLlopart, XBallabriga, RCampbell, MTlustos, LWong, WMeasurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout ChipsDetectors and Experimental TechniquesWe present the first measurements of the performance of the Medipix3 hybrid pixel readout chip after exposure to significant x-ray flux. Specifically the changes in performance of the mixed mode pixel architecture, the digital periphery, digital to analogue converters and the e-fuse technology were characterised. A high intensity, calibrated x- ray source was used to incrementally irradiate the separate regions of the detector whilst it was powered. This is the first total ionizing dose study of a large area pixel detector fabricated using the 130nm CMOS technology.CERNoai:cds.cern.ch:12348862009
spellingShingle Detectors and Experimental Techniques
Plackett, R
Llopart, X
Ballabriga, R
Campbell, M
Tlustos, L
Wong, W
Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips
title Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips
title_full Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips
title_fullStr Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips
title_full_unstemmed Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips
title_short Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips
title_sort measurement of radiation damage to 130nm hybrid pixel detector readout chips
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2009-006.157
http://cds.cern.ch/record/1234886
work_keys_str_mv AT plackettr measurementofradiationdamageto130nmhybridpixeldetectorreadoutchips
AT llopartx measurementofradiationdamageto130nmhybridpixeldetectorreadoutchips
AT ballabrigar measurementofradiationdamageto130nmhybridpixeldetectorreadoutchips
AT campbellm measurementofradiationdamageto130nmhybridpixeldetectorreadoutchips
AT tlustosl measurementofradiationdamageto130nmhybridpixeldetectorreadoutchips
AT wongw measurementofradiationdamageto130nmhybridpixeldetectorreadoutchips

Ejemplares similares