Progress on DC-DC Converters for a Silicon Tracker for the sLHC Upgrade

There is a need for DC-DC converters which can operate in the extremely harsh environment of the sLHC Si Tracker. The environment requires radiation qualification to a total ionizing radiation dose of 50 Mrad and a displacement damage fluence of 5 x 1014 /cm2 of 1 MeV equivalent neutrons. In addition a static magnetic field of 2 Tesla or greater prevents the use of any magnetic components or materials. In February 2007 an Enpirion EN5360 was qualified for the sLHC radiation dosage but the converter has an input voltage limited to a maximum of 5.5V. From a systems point of view this input voltage was not sufficient for the application. Commercial LDMOS FETs have developed using a 0.25 μm process which provided a 12 volt input and were still radiation hard. These results are reported here and in previous papers. Plug in power cards with ×10 voltage ratio are being developed for testing the hybrids with ABCN chips. These plug-in cards have air coils but use commercial chips that are not designed to be radiation hard. This development helps in evaluating system noise and performance. GaN FETs are tested for radiation hardness to ionizing radiation and displacement damage and preliminary results are given.