Study of the Radiation-Hardness of VCSEL and PIN

The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Verti...

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Detalles Bibliográficos
Autores principales: Gan, K K, Abi, B, Fernando, W, Kagan, H P, Kass, R D, Lebbai, M R M, Merritt, H, Moore, J R, Nagarkar, A, Rizatdinova, F, Skubic, P L, Smith, D S, Strang, M
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.338
http://cds.cern.ch/record/1235835
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author Gan, K K
Abi, B
Fernando, W
Kagan, H P
Kass, R D
Lebbai, M R M
Merritt, H
Moore, J R
Nagarkar, A
Rizatdinova, F
Skubic, P L
Smith, D S
Strang, M
author_facet Gan, K K
Abi, B
Fernando, W
Kagan, H P
Kass, R D
Lebbai, M R M
Merritt, H
Moore, J R
Nagarkar, A
Rizatdinova, F
Skubic, P L
Smith, D S
Strang, M
author_sort Gan, K K
collection CERN
description The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.
id cern-1235835
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher CERN
record_format invenio
spelling cern-12358352019-09-30T06:29:59Zdoi:10.5170/CERN-2009-006.338http://cds.cern.ch/record/1235835engGan, K KAbi, BFernando, WKagan, H PKass, R DLebbai, M R MMerritt, HMoore, J RNagarkar, ARizatdinova, FSkubic, P LSmith, D SStrang, MStudy of the Radiation-Hardness of VCSEL and PINDetectors and Experimental TechniquesThe silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.CERNoai:cds.cern.ch:12358352009
spellingShingle Detectors and Experimental Techniques
Gan, K K
Abi, B
Fernando, W
Kagan, H P
Kass, R D
Lebbai, M R M
Merritt, H
Moore, J R
Nagarkar, A
Rizatdinova, F
Skubic, P L
Smith, D S
Strang, M
Study of the Radiation-Hardness of VCSEL and PIN
title Study of the Radiation-Hardness of VCSEL and PIN
title_full Study of the Radiation-Hardness of VCSEL and PIN
title_fullStr Study of the Radiation-Hardness of VCSEL and PIN
title_full_unstemmed Study of the Radiation-Hardness of VCSEL and PIN
title_short Study of the Radiation-Hardness of VCSEL and PIN
title_sort study of the radiation-hardness of vcsel and pin
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2009-006.338
http://cds.cern.ch/record/1235835
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