Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade

We study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obt...

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Detalles Bibliográficos
Autores principales: Abi, B, Rizatdinova, F
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.390
http://cds.cern.ch/record/1235842
Descripción
Sumario:We study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obtained results, we conclude that radiation hardness does not depend on the sensitive area or cut off frequency of PiN diodes. We identify two diodes that can be used for the SLHC upgrade.

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