Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade

We study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obt...

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Detalles Bibliográficos
Autores principales: Abi, B, Rizatdinova, F
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.390
http://cds.cern.ch/record/1235842
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author Abi, B
Rizatdinova, F
author_facet Abi, B
Rizatdinova, F
author_sort Abi, B
collection CERN
description We study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obtained results, we conclude that radiation hardness does not depend on the sensitive area or cut off frequency of PiN diodes. We identify two diodes that can be used for the SLHC upgrade.
id cern-1235842
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher CERN
record_format invenio
spelling cern-12358422019-09-30T06:29:59Zdoi:10.5170/CERN-2009-006.390http://cds.cern.ch/record/1235842engAbi, BRizatdinova, FStudy of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgradeDetectors and Experimental TechniquesWe study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obtained results, we conclude that radiation hardness does not depend on the sensitive area or cut off frequency of PiN diodes. We identify two diodes that can be used for the SLHC upgrade.CERNoai:cds.cern.ch:12358422009
spellingShingle Detectors and Experimental Techniques
Abi, B
Rizatdinova, F
Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
title Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
title_full Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
title_fullStr Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
title_full_unstemmed Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
title_short Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
title_sort study of the radiation hardness performance of pin diodes for the atlas pixel detector at the slhc upgrade
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2009-006.390
http://cds.cern.ch/record/1235842
work_keys_str_mv AT abib studyoftheradiationhardnessperformanceofpindiodesfortheatlaspixeldetectorattheslhcupgrade
AT rizatdinovaf studyoftheradiationhardnessperformanceofpindiodesfortheatlaspixeldetectorattheslhcupgrade

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